SCT3030ARHRC15 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: 650V, 70A, 4-PIN THD, TRENCH-STR
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Power Dissipation (Max): 262W
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
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Technische Details SCT3030ARHRC15 Rohm Semiconductor
Description: 650V, 70A, 4-PIN THD, TRENCH-STR, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Grade: Automotive, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 5.6V @ 13.3mA, Power Dissipation (Max): 262W, Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.
Weitere Produktangebote SCT3030ARHRC15 nach Preis ab 24.9 EUR bis 34.51 EUR
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SCT3030ARHRC15 | Hersteller : ROHM Semiconductor |
SiC MOSFETs Transistor SiC MOSFET 650V 30m 3rd Gen TO-247-4L |
auf Bestellung 745 Stücke: Lieferzeit 10-14 Tag (e) |
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