SCT3030AW7TL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: SICFET N-CH 650V 70A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 267W
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-263-7
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
auf Bestellung 437 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 61.27 EUR |
| 10+ | 54.43 EUR |
| 100+ | 47.61 EUR |
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Technische Details SCT3030AW7TL Rohm Semiconductor
Description: SICFET N-CH 650V 70A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V, Power Dissipation (Max): 267W, Vgs(th) (Max) @ Id: 5.6V @ 13.3mA, Supplier Device Package: TO-263-7, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V.
Weitere Produktangebote SCT3030AW7TL nach Preis ab 42.91 EUR bis 61.69 EUR
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SCT3030AW7TL | Hersteller : ROHM Semiconductor |
MOSFET 650V 7PIN SIC 70A |
auf Bestellung 1039 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3030AW7TL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: TO263-7 Drain-source voltage: 650V Drain current: 70A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 267W Gate charge: 104nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 175A Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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SCT3030AW7TL | Hersteller : Rohm Semiconductor |
Description: SICFET N-CH 650V 70A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Power Dissipation (Max): 267W Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Supplier Device Package: TO-263-7 Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V |
Produkt ist nicht verfügbar |
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| SCT3030AW7TL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: TO263-7 Drain-source voltage: 650V Drain current: 70A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 267W Gate charge: 104nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 175A |
Produkt ist nicht verfügbar |