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SCT3030AW7TL

SCT3030AW7TL ROHM Semiconductor


datasheet?p=SCT3030AW7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
SiC MOSFETs TO263 650V 70A N-CH SIC
auf Bestellung 1039 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+50.14 EUR
10+42.47 EUR
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Technische Details SCT3030AW7TL ROHM Semiconductor

Description: SICFET N-CH 650V 70A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V, Power Dissipation (Max): 267W, Vgs(th) (Max) @ Id: 5.6V @ 13.3mA, Supplier Device Package: TO-263-7, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V.

Weitere Produktangebote SCT3030AW7TL nach Preis ab 39.64 EUR bis 50.23 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SCT3030AW7TL SCT3030AW7TL Hersteller : Rohm Semiconductor datasheet?p=SCT3030AW7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 650V 70A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 267W
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-263-7
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
auf Bestellung 432 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+50.23 EUR
10+41.09 EUR
100+39.64 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SCT3030AW7TL Hersteller : ROHM SEMICONDUCTOR datasheet?p=SCT3030AW7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key SCT3030AW7TL SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SCT3030AW7TL SCT3030AW7TL Hersteller : Rohm Semiconductor datasheet?p=SCT3030AW7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 650V 70A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 267W
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-263-7
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH