SCT3030KLGC11 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 72A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 339W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT3030KLGC11 Rohm Semiconductor
Description: SICFET N-CH 1200V 72A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V, Power Dissipation (Max): 339W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 13.3mA, Supplier Device Package: TO-247N, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V.
Weitere Produktangebote SCT3030KLGC11 nach Preis ab 105.11 EUR bis 124.1 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SCT3030KLGC11 | Hersteller : ROHM Semiconductor |
SiC MOSFETs N-Ch 1200V SiC 72A 30mOhm TrenchMOS |
auf Bestellung 685 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
| SCT3030KLGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W Kind of package: tube Case: TO247 Polarisation: unipolar Gate-source voltage: -4...22V Gate charge: 131nC On-state resistance: 39mΩ Type of transistor: N-MOSFET Kind of channel: enhancement Drain current: 72A Pulsed drain current: 180A Power dissipation: 339W Mounting: THT Drain-source voltage: 1.2kV Technology: SiC |
Produkt ist nicht verfügbar |