SCT3030KLHRC11 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 72A TO247N
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Power Dissipation (Max): 339W
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT3030KLHRC11 Rohm Semiconductor
Description: SICFET N-CH 1200V 72A TO247N, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: TO-247N, Vgs(th) (Max) @ Id: 5.6V @ 13.3mA, Power Dissipation (Max): 339W, Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote SCT3030KLHRC11 nach Preis ab 99.93 EUR bis 99.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
SCT3030KLHRC11 | Hersteller : ROHM Semiconductor |
SiC MOSFETs 1200V 72A 339W SIC 30mOhm TO-247N |
auf Bestellung 352 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||
| SCT3030KLHRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W Kind of package: tube Case: TO247 Polarisation: unipolar Gate-source voltage: -4...22V Gate charge: 131nC On-state resistance: 39mΩ Type of transistor: N-MOSFET Kind of channel: enhancement Drain current: 72A Pulsed drain current: 180A Power dissipation: 339W Mounting: THT Drain-source voltage: 1.2kV Technology: SiC |
Produkt ist nicht verfügbar |