SCT3040KLGC11 ROHM Semiconductor
auf Bestellung 129 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 61.85 EUR |
| 10+ | 58.8 EUR |
| 30+ | 52.43 EUR |
| 60+ | 49.42 EUR |
| 120+ | 48.89 EUR |
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Technische Details SCT3040KLGC11 ROHM Semiconductor
Description: SICFET N-CH 1200V 55A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V, Power Dissipation (Max): 262W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 10mA, Supplier Device Package: TO-247N, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800.
Weitere Produktangebote SCT3040KLGC11 nach Preis ab 48.59 EUR bis 62.13 EUR
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SCT3040KLGC11 | Hersteller : Rohm Semiconductor |
 Description: SICFET N-CH 1200V 55A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Power Dissipation (Max): 262W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 10mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800 |
auf Bestellung 1584 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3040KLGC11 | Hersteller : ROHM |
Description: ROHM - SCT3040KLGC11 - Leistungs-MOSFET, Siliziumkarbid, n-Kanal, 55A, 1.2kV, 0.04 Ohm, 18V, 5.6V tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 55A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 262W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.04ohm SVHC: Lead (17-Jan-2023) |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3040KLGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; 262W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 55A Power dissipation: 262W Case: TO247 On-state resistance: 40mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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SCT3040KLGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; 262W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 55A Power dissipation: 262W Case: TO247 On-state resistance: 40mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |