SCT3040KLHRC11 ROHM Semiconductor
auf Bestellung 555 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 63.78 EUR |
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Technische Details SCT3040KLHRC11 ROHM Semiconductor
Description: SICFET N-CH 1200V 55A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Ta), Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V, Power Dissipation (Max): 262W, Vgs(th) (Max) @ Id: 5.6V @ 10mA, Supplier Device Package: TO-247N, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V.
Weitere Produktangebote SCT3040KLHRC11 nach Preis ab 74.6 EUR bis 95.37 EUR
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SCT3040KLHRC11 | Hersteller : Rohm Semiconductor |
 Description: SICFET N-CH 1200V 55A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Power Dissipation (Max): 262W Vgs(th) (Max) @ Id: 5.6V @ 10mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V |
auf Bestellung 886 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3040KLHRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 137A; 262W Mounting: THT On-state resistance: 52mΩ Type of transistor: N-MOSFET Power dissipation: 262W Polarisation: unipolar Kind of package: tube Gate charge: 107nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 137A Case: TO247 Drain-source voltage: 1.2kV Drain current: 55A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SCT3040KLHRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 137A; 262W Mounting: THT On-state resistance: 52mΩ Type of transistor: N-MOSFET Power dissipation: 262W Polarisation: unipolar Kind of package: tube Gate charge: 107nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 137A Case: TO247 Drain-source voltage: 1.2kV Drain current: 55A |
Produkt ist nicht verfügbar |