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SCT3040KW7TL

SCT3040KW7TL ROHM Semiconductor


datasheet?p=SCT3040KW7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: ROHM Semiconductor
SiC MOSFETs Transistor SiC MOSFET 1200V 40m 3rd Gen TO-263-7L
auf Bestellung 496 Stücke:

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1+47.22 EUR
10+44.63 EUR
1000+42.98 EUR
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Technische Details SCT3040KW7TL ROHM Semiconductor

Description: SICFET N-CH 1200V 56A TO263-7, Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -4V, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 5.6V @ 10mA, Power Dissipation (Max): 267W, Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).

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SCT3040KW7TL SCT3040KW7TL Hersteller : Rohm Semiconductor datasheet?p=SCT3040KW7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1200V 56A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -4V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 5.6V @ 10mA
Power Dissipation (Max): 267W
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 1237 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+48.01 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SCT3040KW7TL SCT3040KW7TL Hersteller : Rohm Semiconductor datasheet?p=SCT3040KW7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1200V 56A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -4V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 5.6V @ 10mA
Power Dissipation (Max): 267W
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
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Im Einkaufswagen  Stück im Wert von  UAH