SCT3060ALGC11 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: SICFET N-CH 650V 39A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
auf Bestellung 603 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 22.92 EUR |
| 30+ | 12.34 EUR |
| 120+ | 12.13 EUR |
| 510+ | 12 EUR |
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Technische Details SCT3060ALGC11 Rohm Semiconductor
Description: SICFET N-CH 650V 39A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V, Power Dissipation (Max): 165W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 6.67mA, Supplier Device Package: TO-247N, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500.
Weitere Produktangebote SCT3060ALGC11 nach Preis ab 12.65 EUR bis 53.9 EUR
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SCT3060ALGC11 | Hersteller : ROHM Semiconductor |
SiC MOSFETs N-Ch 650V SiC 39A 60mOhm TrenchMOS |
auf Bestellung 1061 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3060ALGC11 | Hersteller : ROHM |
Description: ROHM - SCT3060ALGC11 - Leistungs-MOSFET, Siliziumkarbid, n-Kanal, 39A, 650V, 0.06 Ohm, 18V, 5.6V tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 39A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 165W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 413 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3060ALGC11 | Hersteller : ROHM - Japan |
SiC-N-Ch 650V 39A 165W 0,078R TO247 SCT3060ALGC11 : Rohm SCT3060ALGC11 TSCT3060algc11 Anzahl je Verpackung: 2 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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