Technische Details SCT3060ALHRC11 ROHM Semiconductor
Description: SICFET N-CH 650V 39A TO247N, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Part Status: Active, Supplier Device Package: TO-247N, Vgs(th) (Max) @ Id: 5.6V @ 6.67mA, Power Dissipation (Max): 165W, Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote SCT3060ALHRC11 nach Preis ab 23.73 EUR bis 36.98 EUR
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SCT3060ALHRC11 | Hersteller : Rohm Semiconductor |
 Description: SICFET N-CH 650V 39A TO247NQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: TO-247N Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Power Dissipation (Max): 165W Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
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