SCT3060ARHRC15 ROHM Semiconductor
auf Bestellung 895 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 17.78 EUR |
| 10+ | 15.61 EUR |
| 100+ | 12.6 EUR |
| 900+ | 11.62 EUR |
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Technische Details SCT3060ARHRC15 ROHM Semiconductor
Description: 650V, 39A, 4-PIN THD, TRENCH-STR, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V, Power Dissipation (Max): 165W, Vgs(th) (Max) @ Id: 5.6V @ 6.67mA, Supplier Device Package: TO-247-4L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SCT3060ARHRC15 nach Preis ab 15.67 EUR bis 17.85 EUR
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SCT3060ARHRC15 | Hersteller : Rohm Semiconductor |
 Description: 650V, 39A, 4-PIN THD, TRENCH-STRPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Power Dissipation (Max): 165W Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 446 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3060ARHRC15 | Hersteller : ROHM |
Description: ROHM - SCT3060ARHRC15 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 39 A, 650 V, 0.06 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 39A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 165W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: To Be Advised |
auf Bestellung 447 Stücke: Lieferzeit 14-21 Tag (e) |