SCT3060AW7TL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 38A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Power Dissipation (Max): 159W
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
Description: SICFET N-CH 650V 38A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Power Dissipation (Max): 159W
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1000+ | 18.59 EUR |
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Technische Details SCT3060AW7TL Rohm Semiconductor
Description: ROHM - SCT3060AW7TL - Siliziumkarbid-MOSFET, Eins, n-Kanal, 38 A, 650 V, 0.06 ohm, TO-263 (D2PAK), tariffCode: 85412900, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 38A, hazardous: false, rohsPhthalatesCompliant: YES, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 5.6V, MOSFET-Modul-Konfiguration: Eins, euEccn: NLR, Verlustleistung: 159W, Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 7Pin(s), Produktpalette: Multicomp Pro RJ45 Adapter, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 18V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.06ohm, SVHC: Lead (17-Jan-2023).
Weitere Produktangebote SCT3060AW7TL nach Preis ab 18.3 EUR bis 29.34 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
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SCT3060AW7TL | Hersteller : ROHM Semiconductor | MOSFET 650V 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET |
auf Bestellung 1835 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3060AW7TL | Hersteller : Rohm Semiconductor |
Description: SICFET N-CH 650V 38A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Power Dissipation (Max): 159W Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Supplier Device Package: TO-263-7 Part Status: Active Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V |
auf Bestellung 1189 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3060AW7TL | Hersteller : ROHM |
Description: ROHM - SCT3060AW7TL - Siliziumkarbid-MOSFET, Eins, n-Kanal, 38 A, 650 V, 0.06 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 38A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 159W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: Lead (17-Jan-2023) |
auf Bestellung 858 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3060AW7TL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 38A; Idm: 95A; 159W Mounting: SMD Drain-source voltage: 650V Drain current: 38A On-state resistance: 78mΩ Type of transistor: N-MOSFET Power dissipation: 159W Polarisation: unipolar Kind of package: reel; tape Gate charge: 58nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 95A Case: TO263-7 Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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SCT3060AW7TL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 38A; Idm: 95A; 159W Mounting: SMD Drain-source voltage: 650V Drain current: 38A On-state resistance: 78mΩ Type of transistor: N-MOSFET Power dissipation: 159W Polarisation: unipolar Kind of package: reel; tape Gate charge: 58nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 95A Case: TO263-7 |
Produkt ist nicht verfügbar |