SCT3060AW7TL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 38A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Power Dissipation (Max): 159W
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
| Anzahl | Preis |
|---|---|
| 1000+ | 18.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT3060AW7TL Rohm Semiconductor
Description: SICFET N-CH 650V 38A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V, Power Dissipation (Max): 159W, Vgs(th) (Max) @ Id: 5.6V @ 6.67mA, Supplier Device Package: TO-263-7, Part Status: Active, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V.
Weitere Produktangebote SCT3060AW7TL nach Preis ab 17.48 EUR bis 25.92 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SCT3060AW7TL | Hersteller : ROHM Semiconductor |
SiC MOSFETs Transistor SiC MOSFET 650V 60m 3rd Gen TO-263-7L |
auf Bestellung 1757 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
SCT3060AW7TL | Hersteller : Rohm Semiconductor |
Description: SICFET N-CH 650V 38A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Power Dissipation (Max): 159W Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Supplier Device Package: TO-263-7 Part Status: Active Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V |
auf Bestellung 1155 Stücke: Lieferzeit 10-14 Tag (e) |
|