SCT3080ALGC11 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: SICFET N-CH 650V 30A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
auf Bestellung 977 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.55 EUR |
| 30+ | 9.63 EUR |
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Technische Details SCT3080ALGC11 Rohm Semiconductor
Description: SICFET N-CH 650V 30A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V, Power Dissipation (Max): 134W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 5mA, Supplier Device Package: TO-247N, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500.
Weitere Produktangebote SCT3080ALGC11 nach Preis ab 10.60 EUR bis 42.86 EUR
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SCT3080ALGC11 | Hersteller : ROHM Semiconductor |
SiC MOSFETs N-Ch 650V 30A Silicon Carbide SiC |
auf Bestellung 1692 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3080ALGC11 | Hersteller : ROHM |
Description: ROHM - SCT3080ALGC11 - Leistungs-MOSFET, Siliziumkarbid, n-Kanal, 30A, 650V, 0.08 Ohm, 18V, 5.6V tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 134W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.08ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 219 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3080ALGC11 | Hersteller : ROHM - Japan |
SiC-N-Ch 650V 30A 134W 0,104R TO247 SCT3080ALGC11 : Rohm SCT3080ALGC11 TSCT3080algc11 Anzahl je Verpackung: 2 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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| SCT3080ALGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247 Case: TO247 Mounting: THT Kind of package: tube Drain-source voltage: 650V Drain current: 30A On-state resistance: 0.104Ω Type of transistor: N-MOSFET Power dissipation: 134W Polarisation: unipolar Gate charge: 48nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Pulsed drain current: 75A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SCT3080ALGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247 Case: TO247 Mounting: THT Kind of package: tube Drain-source voltage: 650V Drain current: 30A On-state resistance: 0.104Ω Type of transistor: N-MOSFET Power dissipation: 134W Polarisation: unipolar Gate charge: 48nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Pulsed drain current: 75A |
Produkt ist nicht verfügbar |