SCT3080ALGC11 ROHM
Hersteller: ROHM
Description: ROHM - SCT3080ALGC11 - Leistungs-MOSFET, Siliziumkarbid, n-Kanal, 30A, 650V, 0.08 Ohm, 18V, 5.6V
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 30A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 5.6V
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 134W
SVHC: Lead (23-Jan-2024)
Bauform - Transistor: TO-247N
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 18V
Drain-Source-Durchgangswiderstand: 0.08ohm
| Anzahl | Privatkunde |
|---|---|
| 10+ | 23.69 EUR |
| 11+ | 20.48 EUR |
| 50+ | 19.06 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT3080ALGC11 ROHM
Description: SICFET N-CH 650V 30A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V, Power Dissipation (Max): 134W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 5mA, Supplier Device Package: TO-247N, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500.
Weitere Produktangebote SCT3080ALGC11 nach Preis ab 12.76 EUR bis 51.94 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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SCT3080ALGC11 | ROHM Semiconductor |
SiC MOSFETs N-Ch 650V 30A Silicon Carbide SiC |
auf Bestellung 139 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3080ALGC11 | Rohm Semiconductor |
Description: SICFET N-CH 650V 30A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 134W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500 |
auf Bestellung 393 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3080ALGC11 | Rohm Semiconductor |
Trans MOSFET N-CH SiC 650V 30A 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SCT3080ALGC11 | Rohm Semiconductor |
Trans MOSFET N-CH SiC 650V 30A 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| SCT3080ALGC11 | ROHM - Japan |
SiC-N-Ch 650V 30A 134W 0,104R TO247 SCT3080ALGC11 : Rohm SCT3080ALGC11 TSCT3080algc11 Anzahl je Verpackung: 2 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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| SCT3080ALGC11 |
|
Hersteller: ROHM Semiconductor
SiC MOSFETs N-Ch 650V 30A Silicon Carbide SiC
SiC MOSFETs N-Ch 650V 30A Silicon Carbide SiC
auf Bestellung 139 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.28 EUR |
| 10+ | 13.51 EUR |
| 100+ | 12.98 EUR |
| SCT3080ALGC11 |
|
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 30A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
Description: SICFET N-CH 650V 30A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
auf Bestellung 393 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.69 EUR |
| 30+ | 14.9 EUR |
| 60+ | 13.73 EUR |
| 120+ | 12.76 EUR |
| SCT3080ALGC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 650V 30A 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 650V 30A 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| SCT3080ALGC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 650V 30A 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 650V 30A 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| SCT3080ALGC11 |
|
Hersteller: ROHM - Japan
SiC-N-Ch 650V 30A 134W 0,104R TO247 SCT3080ALGC11 : Rohm SCT3080ALGC11 TSCT3080algc11
Anzahl je Verpackung: 2 Stücke
SiC-N-Ch 650V 30A 134W 0,104R TO247 SCT3080ALGC11 : Rohm SCT3080ALGC11 TSCT3080algc11
Anzahl je Verpackung: 2 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 51.94 EUR |