SCT3080ARC14 ROHM Semiconductor
Hersteller: ROHM Semiconductor
SiC MOSFETs 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and
| Anzahl | Preis |
|---|---|
| 1+ | 30.41 EUR |
| 10+ | 19.91 EUR |
| 100+ | 19.84 EUR |
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Technische Details SCT3080ARC14 ROHM Semiconductor
Description: SICFET N-CH 650V 30A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V, Power Dissipation (Max): 134W, Vgs(th) (Max) @ Id: 5.6V @ 5mA, Supplier Device Package: TO-247-4L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V.
Weitere Produktangebote SCT3080ARC14 nach Preis ab 17.42 EUR bis 30.73 EUR
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SCT3080ARC14 | Hersteller : Rohm Semiconductor |
Description: SICFET N-CH 650V 30A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 134W Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V |
auf Bestellung 249 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3080ARC14 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 75A Power dissipation: 134W Case: TO247-4 Gate-source voltage: -4...22V On-state resistance: 0.104Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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