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SCT3080ARC15

SCT3080ARC15 Rohm Semiconductor

sct3080ar-e.pdf
Hersteller: Rohm Semiconductor
Description: 650V, 30A, 4-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 134W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
auf Bestellung 427 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.07 EUR
10+13.37 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SCT3080ARC15 Rohm Semiconductor

Description: 650V, 30A, 4-PIN THD, TRENCH-STR, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tj), Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V, Power Dissipation (Max): 134W, Vgs(th) (Max) @ Id: 5.6V @ 5mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V.

Weitere Produktangebote SCT3080ARC15 nach Preis ab 9.29 EUR bis 17.14 EUR

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SCT3080ARC15 SCT3080ARC15 Hersteller : ROHM Semiconductor sct3080ar-e.pdf SiC MOSFETs Transistor SiC MOSFET 650V 80m 3rd Gen TO-247-4L
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.14 EUR
10+13.41 EUR
100+12.09 EUR
450+9.57 EUR
900+9.29 EUR
Im Einkaufswagen  Stück im Wert von  UAH