SCT3080ARHRC15 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: 650V, 30A, 4-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 134W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 816 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 16.46 EUR |
| 10+ | 14.11 EUR |
| 450+ | 10.66 EUR |
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Technische Details SCT3080ARHRC15 Rohm Semiconductor
Description: 650V, 30A, 4-PIN THD, TRENCH-STR, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V, Power Dissipation (Max): 134W, Vgs(th) (Max) @ Id: 5.6V @ 5mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SCT3080ARHRC15 nach Preis ab 9.87 EUR bis 17.41 EUR
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SCT3080ARHRC15 | Hersteller : ROHM Semiconductor |
SiC MOSFETs 650V, 30A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive |
auf Bestellung 853 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3080ARHRC15 | Hersteller : ROHM |
Description: ROHM - SCT3080ARHRC15 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 30 A, 650 V, 0.08 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 134W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.08ohm SVHC: To Be Advised |
auf Bestellung 420 Stücke: Lieferzeit 14-21 Tag (e) |