SCT3080ARHRC15 ROHM
Hersteller: ROHM
Description: ROHM - SCT3080ARHRC15 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 30 A, 650 V, 0.08 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 30A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5.6V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 134W
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.08ohm
SVHC: To Be Advised
| Anzahl | Privatkunde |
|---|---|
| 12+ | 21.44 EUR |
| 14+ | 17.75 EUR |
| 15+ | 14.38 EUR |
| 50+ | 13.17 EUR |
| 100+ | 11.97 EUR |
| 250+ | 11.73 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
12 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT3080ARHRC15 ROHM
Description: ROHM - SCT3080ARHRC15 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 30 A, 650 V, 0.08 ohm, TO-247, tariffCode: 85412900, Drain-Source-Spannung Vds: 650V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 30A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 5.6V, MOSFET-Modul-Konfiguration: Eins, euEccn: NLR, Verlustleistung: 134W, Bauform - Transistor: TO-247, Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 18V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.08ohm, SVHC: To Be Advised.
Weitere Produktangebote SCT3080ARHRC15 nach Preis ab 11.54 EUR bis 22.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SCT3080ARHRC15 | Rohm Semiconductor |
Description: 650V, 30A, 4-PIN THD, TRENCH-STR Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 134W Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 709 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3080ARHRC15 | ROHM Semiconductor |
SiC MOSFETs Transistor SiC MOSFET 650V 80mO 3rd Gen TO-247-4L |
auf Bestellung 852 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3080ARHRC15 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; 650V; 30A; 134W; TO247-4 Type of transistor: N-MOSFET Technology: SiC Drain-source voltage: 650V Drain current: 30A Power dissipation: 134W Case: TO247-4 Mounting: THT Kind of channel: enhancement Gate charge: 48nC Application: automotive industry Gate-source voltage: -4...22V |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 9 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SCT3080ARHRC15 |
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Hersteller: Rohm Semiconductor
Description: 650V, 30A, 4-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 134W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Qualification: AEC-Q101
Description: 650V, 30A, 4-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 134W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 709 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.1 EUR |
| 10+ | 15.32 EUR |
| 50+ | 12.42 EUR |
| 450+ | 12.22 EUR |
| SCT3080ARHRC15 |
|
Hersteller: ROHM Semiconductor
SiC MOSFETs Transistor SiC MOSFET 650V 80mO 3rd Gen TO-247-4L
SiC MOSFETs Transistor SiC MOSFET 650V 80mO 3rd Gen TO-247-4L
auf Bestellung 852 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.21 EUR |
| 10+ | 12.51 EUR |
| 100+ | 12.29 EUR |
| 450+ | 12.19 EUR |
| 900+ | 11.54 EUR |
| SCT3080ARHRC15 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; 650V; 30A; 134W; TO247-4
Type of transistor: N-MOSFET
Technology: SiC
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 134W
Case: TO247-4
Mounting: THT
Kind of channel: enhancement
Gate charge: 48nC
Application: automotive industry
Gate-source voltage: -4...22V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; 650V; 30A; 134W; TO247-4
Type of transistor: N-MOSFET
Technology: SiC
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 134W
Case: TO247-4
Mounting: THT
Kind of channel: enhancement
Gate charge: 48nC
Application: automotive industry
Gate-source voltage: -4...22V
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)