SCT3080AW7TL ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 19.68 EUR |
| 10+ | 14.24 EUR |
| 100+ | 13.62 EUR |
| 500+ | 13.57 EUR |
| 1000+ | 13.48 EUR |
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Technische Details SCT3080AW7TL ROHM Semiconductor
Description: SICFET N-CH 650V 29A TO263-7, Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -4V, Part Status: Active, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 5.6V @ 5mA, Power Dissipation (Max): 125W, Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Weitere Produktangebote SCT3080AW7TL nach Preis ab 15.2 EUR bis 20.73 EUR
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SCT3080AW7TL | Hersteller : Rohm Semiconductor |
 Description: SICFET N-CH 650V 29A TO263-7Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -4V Part Status: Active Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 5.6V @ 5mA Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Power Dissipation (Max): 125W |
auf Bestellung 884 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3080AW7TL | Hersteller : Rohm Semiconductor |
Description: SICFET N-CH 650V 29A TO263-7 Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -4V Part Status: Active Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 5.6V @ 5mA Power Dissipation (Max): 125W Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
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