SCT3080AW7TL ROHM
Hersteller: ROHM
Description: ROHM - SCT3080AW7TL - Siliziumkarbid-MOSFET, Eins, n-Kanal, 29 A, 650 V, 0.08 ohm, TO-263 (D2PAK)
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5.6V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 125W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.08ohm
SVHC: Lead (23-Jan-2024)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 25.26 EUR |
| 12+ | 20.35 EUR |
| 14+ | 15.9 EUR |
| 50+ | 15.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT3080AW7TL ROHM
Description: ROHM - SCT3080AW7TL - Siliziumkarbid-MOSFET, Eins, n-Kanal, 29 A, 650 V, 0.08 ohm, TO-263 (D2PAK), tariffCode: 85412900, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 29A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 5.6V, MOSFET-Modul-Konfiguration: Eins, euEccn: NLR, Verlustleistung: 125W, Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 7Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 18V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.08ohm, SVHC: Lead (23-Jan-2024).
Weitere Produktangebote SCT3080AW7TL nach Preis ab 13.09 EUR bis 30.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SCT3080AW7TL | ROHM Semiconductor |
SiC MOSFETs Transistor SiC MOSFET 650V 80m 3rd Gen TO-263-7L |
auf Bestellung 855 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3080AW7TL | Rohm Semiconductor |
Description: SICFET N-CH 650V 29A TO263-7 Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -4V Part Status: Active Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 5.6V @ 5mA Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Power Dissipation (Max): 125W |
auf Bestellung 882 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3080AW7TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; 650V; 29A; 125W; TO263-7 Type of transistor: N-MOSFET Technology: SiC Drain-source voltage: 650V Drain current: 29A Power dissipation: 125W Case: TO263-7 Gate-source voltage: -4...22V Mounting: SMD Gate charge: 48nC Kind of channel: enhancement |
auf Bestellung 2005 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3080AW7TL |
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Hersteller: ROHM Semiconductor
SiC MOSFETs Transistor SiC MOSFET 650V 80m 3rd Gen TO-263-7L
SiC MOSFETs Transistor SiC MOSFET 650V 80m 3rd Gen TO-263-7L
auf Bestellung 855 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.25 EUR |
| 10+ | 20.56 EUR |
| 100+ | 18.16 EUR |
| 500+ | 17.17 EUR |
| SCT3080AW7TL |
|
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 29A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Power Dissipation (Max): 125W
Description: SICFET N-CH 650V 29A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Power Dissipation (Max): 125W
auf Bestellung 882 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 30.62 EUR |
| 10+ | 21.61 EUR |
| 100+ | 16.54 EUR |
| 500+ | 15.08 EUR |
| SCT3080AW7TL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 650V; 29A; 125W; TO263-7
Type of transistor: N-MOSFET
Technology: SiC
Drain-source voltage: 650V
Drain current: 29A
Power dissipation: 125W
Case: TO263-7
Gate-source voltage: -4...22V
Mounting: SMD
Gate charge: 48nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 650V; 29A; 125W; TO263-7
Type of transistor: N-MOSFET
Technology: SiC
Drain-source voltage: 650V
Drain current: 29A
Power dissipation: 125W
Case: TO263-7
Gate-source voltage: -4...22V
Mounting: SMD
Gate charge: 48nC
Kind of channel: enhancement
auf Bestellung 2005 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 16.9 EUR |
| 10+ | 15.66 EUR |
| 30+ | 14.83 EUR |
| 50+ | 13.19 EUR |
| 100+ | 13.09 EUR |