SCT3080KLHRC11 ROHM Semiconductor
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 29.53 EUR |
| 25+ | 28 EUR |
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Technische Details SCT3080KLHRC11 ROHM Semiconductor
Description: SICFET N-CH 1200V 31A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V, Power Dissipation (Max): 165W, Vgs(th) (Max) @ Id: 5.6V @ 5mA, Supplier Device Package: TO-247N, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT3080KLHRC11 nach Preis ab 17.67 EUR bis 38.25 EUR
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SCT3080KLHRC11 | Hersteller : Rohm Semiconductor |
 Description: SICFET N-CH 1200V 31A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 165W Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-247N Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 842 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3080KLHRC11 | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 31A Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3080KLHRC11 | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 31A Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 369 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3080KLHRC11 | Hersteller : ROHM |
Description: ROHM - SCT3080KLHRC11 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 31 A, 1.2 kV, 0.08 ohm, TO-247N tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 31A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 165W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.08ohm |
auf Bestellung 340 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3080KLHRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 77A; 165W Mounting: THT On-state resistance: 0.104Ω Type of transistor: N-MOSFET Power dissipation: 165W Polarisation: unipolar Kind of package: tube Gate charge: 60nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 77A Case: TO247 Drain-source voltage: 1.2kV Drain current: 31A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SCT3080KLHRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 77A; 165W Mounting: THT On-state resistance: 0.104Ω Type of transistor: N-MOSFET Power dissipation: 165W Polarisation: unipolar Kind of package: tube Gate charge: 60nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 77A Case: TO247 Drain-source voltage: 1.2kV Drain current: 31A |
Produkt ist nicht verfügbar |