Technische Details SCT3080KW7TL ROHM Semiconductor
Description: SICFET N-CH 1200V 30A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V, Power Dissipation (Max): 159W, Vgs(th) (Max) @ Id: 5.6V @ 5mA, Supplier Device Package: TO-263-7, Part Status: Active, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V.
Weitere Produktangebote SCT3080KW7TL nach Preis ab 17.16 EUR bis 32.49 EUR
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SCT3080KW7TL | Hersteller : Rohm Semiconductor |
 Description: SICFET N-CH 1200V 30A TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 159W Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-263-7 Part Status: Active Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V |
auf Bestellung 759 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3080KW7TL | Hersteller : Rohm Semiconductor |
Description: SICFET N-CH 1200V 30A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 159W Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-263-7 Part Status: Active Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V |
Produkt ist nicht verfügbar |
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| SCT3080KW7TL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 75A; 159W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 75A Power dissipation: 159W Case: TO263-7 Gate-source voltage: -4...22V On-state resistance: 0.104Ω Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |