SCT30N120H

SCT30N120H STMicroelectronics


sct30n120h.pdf Hersteller: STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm
auf Bestellung 832 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37 EUR
10+32.88 EUR
100+28.76 EUR
250+28.51 EUR
1000+25.47 EUR
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Technische Details SCT30N120H STMicroelectronics

Description: SICFET N-CH 1200V 40A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Power Dissipation (Max): 270W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: H2Pak-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V.

Weitere Produktangebote SCT30N120H

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SCT30N120H SCT30N120H Hersteller : STMicroelectronics sct30n120h.pdf Trans MOSFET N-CH SiC 1.2KV 42A 3-Pin(2+Tab) H2PAK T/R
Produkt ist nicht verfügbar
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SCT30N120H Hersteller : STMicroelectronics sct30n120h.pdf Trans MOSFET N-CH SiC 1.2KV 42A 3-Pin(2+Tab) H2PAK T/R
Produkt ist nicht verfügbar
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SCT30N120H SCT30N120H Hersteller : STMicroelectronics sct30n120h.pdf Trans MOSFET N-CH SiC 1.2KV 42A 3-Pin(2+Tab) H2PAK T/R
Produkt ist nicht verfügbar
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SCT30N120H Hersteller : STMicroelectronics sct30n120h.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 42A; Idm: 90A; 230W; H2PAK-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 90A
Power dissipation: 230W
Case: H2PAK-2
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: -10...25V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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SCT30N120H SCT30N120H Hersteller : STMicroelectronics sct30n120h.pdf Description: SICFET N-CH 1200V 40A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SCT30N120H SCT30N120H Hersteller : STMicroelectronics sct30n120h.pdf Description: SICFET N-CH 1200V 40A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SCT30N120H Hersteller : STMicroelectronics sct30n120h.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 42A; Idm: 90A; 230W; H2PAK-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 90A
Power dissipation: 230W
Case: H2PAK-2
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: -10...25V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH