auf Bestellung 358 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 49.74 EUR |
| 10+ | 45.34 EUR |
| 25+ | 40.25 EUR |
| 50+ | 38.84 EUR |
| 100+ | 37.54 EUR |
| 250+ | 34.37 EUR |
| 450+ | 34.32 EUR |
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Technische Details SCT3105KLGC11 ROHM Semiconductor
Description: SICFET N-CH 1200V 24A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V, Power Dissipation (Max): 134W, Vgs(th) (Max) @ Id: 5.6V @ 3.81mA, Supplier Device Package: TO-247N, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V.
Weitere Produktangebote SCT3105KLGC11 nach Preis ab 43.15 EUR bis 55.59 EUR
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SCT3105KLGC11 | Hersteller : Rohm Semiconductor |
 Description: SICFET N-CH 1200V 24A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V Power Dissipation (Max): 134W Vgs(th) (Max) @ Id: 5.6V @ 3.81mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V |
auf Bestellung 159 Stücke: Lieferzeit 21-28 Tag (e) |
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