SCT3105KRC14 ROHM Semiconductor
Hersteller: ROHM Semiconductor
SiC MOSFETs 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and
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Technische Details SCT3105KRC14 ROHM Semiconductor
Description: SICFET N-CH 1200V 24A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V, Power Dissipation (Max): 134W, Vgs(th) (Max) @ Id: 5.6V @ 3.81mA, Supplier Device Package: TO-247-4L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V.
Weitere Produktangebote SCT3105KRC14 nach Preis ab 20.59 EUR bis 32.56 EUR
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SCT3105KRC14 | Rohm Semiconductor |
Description: SICFET N-CH 1200V 24A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V Power Dissipation (Max): 134W Vgs(th) (Max) @ Id: 5.6V @ 3.81mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V |
auf Bestellung 102 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3105KRC14 |
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Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 24A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
Power Dissipation (Max): 134W
Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
Description: SICFET N-CH 1200V 24A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
Power Dissipation (Max): 134W
Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 32.56 EUR |
| 30+ | 20.59 EUR |