SCT3120ALGC11 Rohm Semiconductor

Description: SICFET N-CH 650V 21A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V, Power Dissipation (Max): 103W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 3.33mA, Supplier Device Package: TO-247N, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V.