SCT3120ALHRC11 ROHM Semiconductor
auf Bestellung 827 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.5 EUR |
| 10+ | 9.43 EUR |
| 25+ | 8.99 EUR |
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Technische Details SCT3120ALHRC11 ROHM Semiconductor
Description: SICFET N-CH 650V 21A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V, Power Dissipation (Max): 103W, Vgs(th) (Max) @ Id: 5.6V @ 3.33mA, Supplier Device Package: TO-247N, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SCT3120ALHRC11 nach Preis ab 8.68 EUR bis 10.03 EUR
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SCT3120ALHRC11 | Hersteller : Rohm Semiconductor |
 Description: SICFET N-CH 650V 21A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V Power Dissipation (Max): 103W Vgs(th) (Max) @ Id: 5.6V @ 3.33mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2164 Stücke: Lieferzeit 10-14 Tag (e) |
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