SCT3120ALHRC11 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 650V 21A 3-Pin(3+Tab) TO-247N Tube Automotive AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 20+ | 9.28 EUR |
| 30+ | 9.06 EUR |
| 120+ | 8.77 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
20 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT3120ALHRC11 Rohm Semiconductor
Description: SICFET N-CH 650V 21A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V, Power Dissipation (Max): 103W, Vgs(th) (Max) @ Id: 5.6V @ 3.33mA, Supplier Device Package: TO-247N, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT3120ALHRC11 nach Preis ab 8.45 EUR bis 20.4 EUR
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SCT3120ALHRC11 | Rohm Semiconductor |
Trans MOSFET N-CH SiC 650V 21A 3-Pin(3+Tab) TO-247N Tube Automotive AEC-Q101 |
auf Bestellung 383 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3120ALHRC11 | Rohm Semiconductor |
Description: SICFET N-CH 650V 21A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V Power Dissipation (Max): 103W Vgs(th) (Max) @ Id: 5.6V @ 3.33mA Supplier Device Package: TO-247N Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 2090 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3120ALHRC11 | ROHM Semiconductor |
SiC MOSFETs 650V 21A 103W SIC 120mOhm TO-247N |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3120ALHRC11 | Rohm Semiconductor |
Trans MOSFET N-CH SiC 650V 21A 3-Pin(3+Tab) TO-247N Tube Automotive AEC-Q101 |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3120ALHRC11 | Rohm Semiconductor |
Trans MOSFET N-CH SiC 650V 21A 3-Pin(3+Tab) TO-247N Tube Automotive AEC-Q101 |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SCT3120ALHRC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 650V 21A 3-Pin(3+Tab) TO-247N Tube Automotive AEC-Q101
Trans MOSFET N-CH SiC 650V 21A 3-Pin(3+Tab) TO-247N Tube Automotive AEC-Q101
auf Bestellung 383 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 9.28 EUR |
| 30+ | 8.85 EUR |
| 120+ | 8.45 EUR |
| SCT3120ALHRC11 |
|
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 21A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Power Dissipation (Max): 103W
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Supplier Device Package: TO-247N
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Qualification: AEC-Q101
Description: SICFET N-CH 650V 21A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Power Dissipation (Max): 103W
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Supplier Device Package: TO-247N
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 2090 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.72 EUR |
| 30+ | 9.23 EUR |
| SCT3120ALHRC11 |
|
Hersteller: ROHM Semiconductor
SiC MOSFETs 650V 21A 103W SIC 120mOhm TO-247N
SiC MOSFETs 650V 21A 103W SIC 120mOhm TO-247N
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.79 EUR |
| 10+ | 11 EUR |
| 100+ | 10.66 EUR |
| SCT3120ALHRC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 650V 21A 3-Pin(3+Tab) TO-247N Tube Automotive AEC-Q101
Trans MOSFET N-CH SiC 650V 21A 3-Pin(3+Tab) TO-247N Tube Automotive AEC-Q101
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 17.81 EUR |
| 25+ | 16.76 EUR |
| 50+ | 15.73 EUR |
| 100+ | 14.84 EUR |
| 250+ | 14.16 EUR |
| SCT3120ALHRC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 650V 21A 3-Pin(3+Tab) TO-247N Tube Automotive AEC-Q101
Trans MOSFET N-CH SiC 650V 21A 3-Pin(3+Tab) TO-247N Tube Automotive AEC-Q101
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 20.4 EUR |