Technische Details SCT3120ALHRC11 ROHM Semiconductor
Description: SICFET N-CH 650V 21A TO247N, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: TO-247N, Vgs(th) (Max) @ Id: 5.6V @ 3.33mA, Power Dissipation (Max): 103W, Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote SCT3120ALHRC11 nach Preis ab 7.76 EUR bis 9.01 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||
|---|---|---|---|---|---|---|---|---|---|
 |
SCT3120ALHRC11 | Rohm Semiconductor |
 Description: SICFET N-CH 650V 21A TO247NQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TO-247N Vgs(th) (Max) @ Id: 5.6V @ 3.33mA Power Dissipation (Max): 103W Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 2090 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SCT3120ALHRC11 |
|
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 21A TO247N
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Power Dissipation (Max): 103W
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SICFET N-CH 650V 21A TO247N
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Power Dissipation (Max): 103W
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 2090 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.01 EUR |
| 30+ | 7.76 EUR |