SCT3120AW7TL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 21A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Power Dissipation (Max): 100W
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 2+ | 15.96 EUR |
| 10+ | 12.45 EUR |
| 100+ | 11.48 EUR |
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Technische Details SCT3120AW7TL Rohm Semiconductor
Description: SICFET N-CH 650V 21A TO263-7, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -4V, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 5.6V @ 3.33mA, Power Dissipation (Max): 100W, Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Weitere Produktangebote SCT3120AW7TL nach Preis ab 9.84 EUR bis 16.1 EUR
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SCT3120AW7TL | Hersteller : ROHM Semiconductor |
SiC MOSFETs Transistor SiC MOSFET 650V 120mohm 3rd Gen TO-263-7L |
auf Bestellung 2773 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3120AW7TL | Hersteller : Rohm Semiconductor |
Description: SICFET N-CH 650V 21A TO263-7 Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -4V Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 5.6V @ 3.33mA Power Dissipation (Max): 100W Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
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