SCT3160KLGC11 Rohm Semiconductor
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 12.31 EUR |
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Technische Details SCT3160KLGC11 Rohm Semiconductor
Description: SICFET N-CH 1200V 17A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V, Power Dissipation (Max): 103W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 2.5mA, Supplier Device Package: TO-247N, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800.
Weitere Produktangebote SCT3160KLGC11 nach Preis ab 12.77 EUR bis 39.52 EUR
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SCT3160KLGC11 | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH SiC 1.2KV 17A 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3160KLGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 17A Power dissipation: 103W Case: TO247 On-state resistance: 0.16Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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SCT3160KLGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 17A Power dissipation: 103W Case: TO247 On-state resistance: 0.16Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3160KLGC11 | Hersteller : Rohm Semiconductor |
Description: SICFET N-CH 1200V 17A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V Power Dissipation (Max): 103W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 2.5mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800 |
auf Bestellung 2196 Stücke: Lieferzeit 21-28 Tag (e) |
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SCT3160KLGC11 | Hersteller : ROHM Semiconductor |
MOSFET N-Ch 1200V SiC 17A 160mOhm TrenchMOS |
auf Bestellung 2118 Stücke: Lieferzeit 14-28 Tag (e) |
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SCT3160KLGC11 | Hersteller : ROHM |
Description: ROHM - SCT3160KLGC11 - Leistungs-MOSFET, Siliziumkarbid, n-Kanal, 17A, 1.2kV, 0.16 Ohm, 18V, 5.6V tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 103W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.16ohm |
auf Bestellung 827 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3160KLGC11 | Hersteller : ROHM - Japan |
SiC-N-Ch 1200V 17A 103W 0,208R TO247 SCT3160KLGC11 : Rohm SCT3160KLGC11 TSCT3160klgc11 Anzahl je Verpackung: 2 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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