SCT3160KLGC11 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 18+ | 9.84 EUR |
| 19+ | 9.17 EUR |
| 50+ | 8.27 EUR |
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Technische Details SCT3160KLGC11 Rohm Semiconductor
Description: SICFET N-CH 1200V 17A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V, Power Dissipation (Max): 103W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 2.5mA, Supplier Device Package: TO-247N, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800.
Weitere Produktangebote SCT3160KLGC11 nach Preis ab 9.64 EUR bis 43.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SCT3160KLGC11 | ROHM Semiconductor |
 SiC MOSFETs N-Ch 1200V SiC 17A 160mOhm TrenchMOS |
auf Bestellung 3304 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3160KLGC11 | Rohm Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 17A 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3160KLGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247 Case: TO247 Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Technology: SiC Polarisation: unipolar Drain current: 17A Drain-source voltage: 1.2kV Gate charge: 42nC On-state resistance: 0.16Ω Power dissipation: 103W Kind of channel: enhancement |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3160KLGC11 | Rohm Semiconductor |
Description: SICFET N-CH 1200V 17A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V Power Dissipation (Max): 103W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 2.5mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800 |
auf Bestellung 3719 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3160KLGC11 | ROHM |
Description: ROHM - SCT3160KLGC11 - Leistungs-MOSFET, Siliziumkarbid, n-Kanal, 17A, 1.2kV, 0.16 Ohm, 18V, 5.6V tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins Verlustleistung: 103W SVHC: Lead (23-Jan-2024) Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 18V Drain-Source-Durchgangswiderstand: 0.16ohm |
auf Bestellung 366 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3160KLGC11 | ROHM - Japan |
SiC-N-Ch 1200V 17A 103W 0,208R TO247 SCT3160KLGC11 : Rohm SCT3160KLGC11 TSCT3160klgc11 Anzahl je Verpackung: 2 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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| SCT3160KLGC11 |
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Hersteller: ROHM Semiconductor
SiC MOSFETs N-Ch 1200V SiC 17A 160mOhm TrenchMOS
SiC MOSFETs N-Ch 1200V SiC 17A 160mOhm TrenchMOS
auf Bestellung 3304 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.5 EUR |
| 10+ | 9.84 EUR |
| 450+ | 9.82 EUR |
| SCT3160KLGC11 |
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Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 1.2KV 17A 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 1.2KV 17A 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 12.76 EUR |
| 25+ | 12.03 EUR |
| 50+ | 11.33 EUR |
| 100+ | 10.7 EUR |
| SCT3160KLGC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247
Case: TO247
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Technology: SiC
Polarisation: unipolar
Drain current: 17A
Drain-source voltage: 1.2kV
Gate charge: 42nC
On-state resistance: 0.16Ω
Power dissipation: 103W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247
Case: TO247
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Technology: SiC
Polarisation: unipolar
Drain current: 17A
Drain-source voltage: 1.2kV
Gate charge: 42nC
On-state resistance: 0.16Ω
Power dissipation: 103W
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 15.07 EUR |
| SCT3160KLGC11 |
|
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 17A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800
Description: SICFET N-CH 1200V 17A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800
auf Bestellung 3719 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.72 EUR |
| 30+ | 12.96 EUR |
| 120+ | 11.04 EUR |
| 510+ | 9.64 EUR |
| SCT3160KLGC11 |
|
Hersteller: ROHM
Description: ROHM - SCT3160KLGC11 - Leistungs-MOSFET, Siliziumkarbid, n-Kanal, 17A, 1.2kV, 0.16 Ohm, 18V, 5.6V
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 17A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 5.6V
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 103W
SVHC: Lead (23-Jan-2024)
Bauform - Transistor: TO-247N
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 18V
Drain-Source-Durchgangswiderstand: 0.16ohm
Description: ROHM - SCT3160KLGC11 - Leistungs-MOSFET, Siliziumkarbid, n-Kanal, 17A, 1.2kV, 0.16 Ohm, 18V, 5.6V
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 17A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 5.6V
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 103W
SVHC: Lead (23-Jan-2024)
Bauform - Transistor: TO-247N
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 18V
Drain-Source-Durchgangswiderstand: 0.16ohm
auf Bestellung 366 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 26.92 EUR |
| 11+ | 21.49 EUR |
| 13+ | 16.58 EUR |
| 50+ | 14.97 EUR |
| 100+ | 13.34 EUR |
| 250+ | 13.09 EUR |
| SCT3160KLGC11 |
|
Hersteller: ROHM - Japan
SiC-N-Ch 1200V 17A 103W 0,208R TO247 SCT3160KLGC11 : Rohm SCT3160KLGC11 TSCT3160klgc11
Anzahl je Verpackung: 2 Stücke
SiC-N-Ch 1200V 17A 103W 0,208R TO247 SCT3160KLGC11 : Rohm SCT3160KLGC11 TSCT3160klgc11
Anzahl je Verpackung: 2 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 43.49 EUR |