SCT3160KW7TL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 17A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
| Anzahl | Preis |
|---|---|
| 1000+ | 9.35 EUR |
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Technische Details SCT3160KW7TL Rohm Semiconductor
Description: SICFET N-CH 1200V 17A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V, Power Dissipation (Max): 100W, Vgs(th) (Max) @ Id: 5.6V @ 2.5mA, Supplier Device Package: TO-263-7, Part Status: Active, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V.
Weitere Produktangebote SCT3160KW7TL nach Preis ab 11.12 EUR bis 18.71 EUR
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SCT3160KW7TL | Hersteller : Rohm Semiconductor |
Description: SICFET N-CH 1200V 17A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V Power Dissipation (Max): 100W Vgs(th) (Max) @ Id: 5.6V @ 2.5mA Supplier Device Package: TO-263-7 Part Status: Active Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V |
auf Bestellung 3847 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3160KW7TL | Hersteller : ROHM Semiconductor |
SiC MOSFETs Transistor SiC MOSFET 1200V 160m 3rd Gen TO-263-7L |
auf Bestellung 1740 Stücke: Lieferzeit 10-14 Tag (e) |
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