SCT3160KWAHRTL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: 1200V, 17A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 6.99 EUR |
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Technische Details SCT3160KWAHRTL Rohm Semiconductor
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V, Vgs(th) (Max) @ Id: 5.6V @ 2.5mA, Supplier Device Package: TO-263-7LA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT3160KWAHRTL nach Preis ab 6.99 EUR bis 15.58 EUR
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SCT3160KWAHRTL | Hersteller : ROHM Semiconductor |
SiC MOSFETs 1200V, 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive : AEC-Q101 qualified automotive grade product. SCT3160KWAHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resist |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3160KWAHRTL | Hersteller : Rohm Semiconductor |
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V Vgs(th) (Max) @ Id: 5.6V @ 2.5mA Supplier Device Package: TO-263-7LA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3160KWAHRTL | Hersteller : ROHM |
Description: ROHM - SCT3160KWAHRTL - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 17 A, 1.2 kV, 0.208 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 100W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.208ohm SVHC: To Be Advised |
auf Bestellung 998 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3160KWAHRTL | Hersteller : ROHM |
Description: ROHM - SCT3160KWAHRTL - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 17 A, 1.2 kV, 0.208 ohm, TO-263 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 998 Stücke: Lieferzeit 14-21 Tag (e) |