SCT4013DEHRC11 ROHM Semiconductor
Hersteller: ROHM Semiconductor
SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 105A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
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Technische Details SCT4013DEHRC11 ROHM Semiconductor
Description: 750V, 105A, 3-PIN THD, TRENCH-ST, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 105A (Tj), Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V, Power Dissipation (Max): 312W, Vgs(th) (Max) @ Id: 4.8V @ 30.8mA, Supplier Device Package: TO-247N, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT4013DEHRC11 nach Preis ab 25.09 EUR bis 47.5 EUR
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SCT4013DEHRC11 | Rohm Semiconductor |
Description: 750V, 105A, 3-PIN THD, TRENCH-ST Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 105A (Tj) Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V Power Dissipation (Max): 312W Vgs(th) (Max) @ Id: 4.8V @ 30.8mA Supplier Device Package: TO-247N Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4013DEHRC11 | ROHM |
Description: ROHM - SCT4013DEHRC11 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 105 A, 750 V, 0.0169 ohm, TO-247N tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 105A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 312W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0169ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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Hersteller: Rohm Semiconductor
Description: 750V, 105A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 312W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TO-247N
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
Qualification: AEC-Q101
Description: 750V, 105A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 312W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TO-247N
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 44.92 EUR |
| 30+ | 28.64 EUR |
| 120+ | 25.09 EUR |
| SCT4013DEHRC11 |
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Hersteller: ROHM
Description: ROHM - SCT4013DEHRC11 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 105 A, 750 V, 0.0169 ohm, TO-247N
tariffCode: 85412900
Drain-Source-Spannung Vds: 750V
rohsCompliant: YES
Dauer-Drainstrom Id: 105A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 312W
Bauform - Transistor: TO-247N
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0169ohm
SVHC: No SVHC (25-Jun-2025)
Description: ROHM - SCT4013DEHRC11 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 105 A, 750 V, 0.0169 ohm, TO-247N
tariffCode: 85412900
Drain-Source-Spannung Vds: 750V
rohsCompliant: YES
Dauer-Drainstrom Id: 105A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 312W
Bauform - Transistor: TO-247N
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0169ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 47.5 EUR |
| 10+ | 39.46 EUR |
| 50+ | 37.19 EUR |
| 100+ | 34.89 EUR |