SCT4018KEC11 Rohm Semiconductor
| Anzahl | Preis |
|---|---|
| 6+ | 26.97 EUR |
| 30+ | 26.13 EUR |
| 120+ | 24.87 EUR |
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Technische Details SCT4018KEC11 Rohm Semiconductor
Description: 1200V, 81A, 3-PIN THD, TRENCH-ST, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 81A (Tj), Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V, Power Dissipation (Max): 312W, Vgs(th) (Max) @ Id: 4.8V @ 22.2mA, Supplier Device Package: TO-247N, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V.
Weitere Produktangebote SCT4018KEC11 nach Preis ab 28.35 EUR bis 48.15 EUR
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SCT4018KEC11 | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH SiC 1.2KV 81A 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 370 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT4018KEC11 | Hersteller : ROHM Semiconductor |
SiC MOSFETs TO247 1.2KV 81A N-CH SIC |
auf Bestellung 526 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4018KEC11 | Hersteller : Rohm Semiconductor |
Description: 1200V, 81A, 3-PIN THD, TRENCH-ST Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 81A (Tj) Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V Power Dissipation (Max): 312W Vgs(th) (Max) @ Id: 4.8V @ 22.2mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V |
auf Bestellung 486 Stücke: Lieferzeit 10-14 Tag (e) |
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