auf Bestellung 1145 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 58.84 EUR |
| 10+ | 43.63 EUR |
| 100+ | 40.34 EUR |
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Technische Details SCT4018KW7TL ROHM Semiconductor
Description: 1200V, 75A, 7-PIN SMD, TRENCH-ST, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tj), Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V, Power Dissipation (Max): 267W, Vgs(th) (Max) @ Id: 4.8V @ 22.2mA, Supplier Device Package: TO-263-7L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V.
Weitere Produktangebote SCT4018KW7TL nach Preis ab 38.22 EUR bis 60.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SCT4018KW7TL | Hersteller : Rohm Semiconductor |
 Description: 1200V, 75A, 7-PIN SMD, TRENCH-STPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tj) Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V Power Dissipation (Max): 267W Vgs(th) (Max) @ Id: 4.8V @ 22.2mA Supplier Device Package: TO-263-7L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4018KW7TL | Hersteller : ROHM |
Description: ROHM - SCT4018KW7TL - Siliziumkarbid-MOSFET, Eins, n-Kanal, 75 A, 1.2 kV, 0.018 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 75A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 267W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.018ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 772 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT4018KW7TL | Hersteller : ROHM |
Description: ROHM - SCT4018KW7TL - Siliziumkarbid-MOSFET, Eins, n-Kanal, 75 A, 1.2 kV, 0.018 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 75A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 267W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.018ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 772 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT4018KW7TL | Hersteller : Rohm Semiconductor |
Description: 1200V, 75A, 7-PIN SMD, TRENCH-ST Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tj) Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V Power Dissipation (Max): 267W Vgs(th) (Max) @ Id: 4.8V @ 22.2mA Supplier Device Package: TO-263-7L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V |
Produkt ist nicht verfügbar |