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Technische Details SCT4026DEC11 ROHM Semiconductor
Description: 750V, 26M, 3-PIN THD, TRENCH-STR, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V, Power Dissipation (Max): 176W, Vgs(th) (Max) @ Id: 4.8V @ 15.4mA, Supplier Device Package: TO-247N, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V.
Weitere Produktangebote SCT4026DEC11 nach Preis ab 16.31 EUR bis 31.13 EUR
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SCT4026DEC11 | Hersteller : Rohm Semiconductor |
 Description: 750V, 26M, 3-PIN THD, TRENCH-STRPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V Power Dissipation (Max): 176W Vgs(th) (Max) @ Id: 4.8V @ 15.4mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V |
auf Bestellung 4843 Stücke: Lieferzeit 10-14 Tag (e) |
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