auf Bestellung 870 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 35.83 EUR |
| 10+ | 31.86 EUR |
| 25+ | 29.71 EUR |
| 50+ | 28.79 EUR |
| 100+ | 27.86 EUR |
| 250+ | 26 EUR |
| 450+ | 23.88 EUR |
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Technische Details SCT4026DRHRC15 ROHM Semiconductor
Description: 750V, 56A, 4-PIN THD, TRENCH-STR, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V, Power Dissipation (Max): 176W, Vgs(th) (Max) @ Id: 4.8V @ 15.4mA, Supplier Device Package: TO-247-4L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SCT4026DRHRC15 nach Preis ab 22.73 EUR bis 38.65 EUR
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SCT4026DRHRC15 | Hersteller : Rohm Semiconductor |
 Description: 750V, 56A, 4-PIN THD, TRENCH-STRPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V Power Dissipation (Max): 176W Vgs(th) (Max) @ Id: 4.8V @ 15.4mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 460 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4026DRHRC15 | Hersteller : ROHM |
Description: ROHM - SCT4026DRHRC15 - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 56 A, 750 V, 0.026 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 56A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 176W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.026ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 415 Stücke: Lieferzeit 14-21 Tag (e) |