SCT4026DRHRC15 ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 30.13 EUR |
| 10+ | 20.94 EUR |
| 100+ | 19.5 EUR |
| 450+ | 19.43 EUR |
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Technische Details SCT4026DRHRC15 ROHM Semiconductor
Description: 750V, 56A, 4-PIN THD, TRENCH-STR, Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V, Drain to Source Voltage (Vdss): 750 V, Vgs (Max): +21V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Part Status: Active, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 4.8V @ 15.4mA, Power Dissipation (Max): 176W, Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote SCT4026DRHRC15 nach Preis ab 22.73 EUR bis 38.65 EUR
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SCT4026DRHRC15 | Hersteller : Rohm Semiconductor |
 Description: 750V, 56A, 4-PIN THD, TRENCH-STRInput Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): +21V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 4.8V @ 15.4mA Power Dissipation (Max): 176W Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 460 Stücke: Lieferzeit 10-14 Tag (e) |
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