SCT4026DWAHRTL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: 750V, 51A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 1+ | 23.28 EUR |
| 10+ | 17.59 EUR |
| 100+ | 14.84 EUR |
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Technische Details SCT4026DWAHRTL Rohm Semiconductor
Description: 750V, 51A, 7-PIN SMD, TRENCH-STR, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V, Vgs(th) (Max) @ Id: 4.8V @ 15.4mA, Supplier Device Package: TO-263-7LA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT4026DWAHRTL nach Preis ab 15.15 EUR bis 25.87 EUR
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SCT4026DWAHRTL | Hersteller : ROHM Semiconductor |
SiC MOSFETs TO263 750V 51A N-CH SIC |
auf Bestellung 980 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4026DWAHRTL | Hersteller : ROHM |
Description: ROHM - SCT4026DWAHRTL - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 51 A, 750 V, 0.034 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 51A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.034ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT4026DWAHRTL | Hersteller : ROHM |
Description: ROHM - SCT4026DWAHRTL - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 51 A, 750 V, 0.034 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 51A hazardous: false rohsPhthalatesCompliant: YES isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.034ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT4026DWAHRTL | Hersteller : Rohm Semiconductor |
Description: 750V, 51A, 7-PIN SMD, TRENCH-STR Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V Vgs(th) (Max) @ Id: 4.8V @ 15.4mA Supplier Device Package: TO-263-7LA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V Qualification: AEC-Q101 |
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