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SCT4026DWAHRTL

SCT4026DWAHRTL ROHM Semiconductor


datasheet?p=SCT4026DWAHR&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Hersteller: ROHM Semiconductor
SiC MOSFETs TO263 750V 51A N-CH SIC
auf Bestellung 980 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.87 EUR
10+19.36 EUR
100+15.15 EUR
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Technische Details SCT4026DWAHRTL ROHM Semiconductor

Description: 750V, 51A, 7-PIN SMD, TRENCH-STR, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V, Vgs(th) (Max) @ Id: 4.8V @ 15.4mA, Supplier Device Package: TO-263-7LA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V, Qualification: AEC-Q101.

Weitere Produktangebote SCT4026DWAHRTL nach Preis ab 14.98 EUR bis 27.23 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SCT4026DWAHRTL SCT4026DWAHRTL Hersteller : Rohm Semiconductor datasheet?p=SCT4026DWAHR&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 750V, 51A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.23 EUR
10+19.81 EUR
100+15.21 EUR
500+14.98 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SCT4026DWAHRTL SCT4026DWAHRTL Hersteller : ROHM 4155169.pdf Description: ROHM - SCT4026DWAHRTL - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 51 A, 750 V, 0.034 ohm, TO-263
tariffCode: 85412900
Drain-Source-Spannung Vds: 750V
rohsCompliant: YES
Dauer-Drainstrom Id: 51A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 150W
Bauform - Transistor: TO-263
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.034ohm
SVHC: To Be Advised
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SCT4026DWAHRTL SCT4026DWAHRTL Hersteller : Rohm Semiconductor datasheet?p=SCT4026DWAHR&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 750V, 51A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Qualification: AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH