SCT4036KEHRC11 ROHM Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 34.87 EUR |
| 10+ | 30.73 EUR |
| 100+ | 24.61 EUR |
| 450+ | 24.59 EUR |
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Technische Details SCT4036KEHRC11 ROHM Semiconductor
Description: 1200V, 43A, 3-PIN THD, TRENCH-ST, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V, Power Dissipation (Max): 176W, Vgs(th) (Max) @ Id: 4.8V @ 11.1mA, Supplier Device Package: TO-247N, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SCT4036KEHRC11 nach Preis ab 22.81 EUR bis 41.89 EUR
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SCT4036KEHRC11 | Rohm Semiconductor |
 Description: 1200V, 43A, 3-PIN THD, TRENCH-STPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Power Dissipation (Max): 176W Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 269 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4036KEHRC11 | ROHM |
Description: ROHM - SCT4036KEHRC11 - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 43 A, 1.2 kV, 0.036 ohm, TO-247N tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 43A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 176W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.036ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 398 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT4036KEHRC11 |
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Hersteller: Rohm Semiconductor
Description: 1200V, 43A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Description: 1200V, 43A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 269 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 39.6 EUR |
| 10+ | 28.37 EUR |
| SCT4036KEHRC11 |
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Hersteller: ROHM
Description: ROHM - SCT4036KEHRC11 - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 43 A, 1.2 kV, 0.036 ohm, TO-247N
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 43A
hazardous: false
rohsPhthalatesCompliant: YES
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 176W
Bauform - Transistor: TO-247N
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.036ohm
SVHC: Lead (23-Jan-2024)
Description: ROHM - SCT4036KEHRC11 - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 43 A, 1.2 kV, 0.036 ohm, TO-247N
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 43A
hazardous: false
rohsPhthalatesCompliant: YES
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 176W
Bauform - Transistor: TO-247N
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.036ohm
SVHC: Lead (23-Jan-2024)
auf Bestellung 398 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 41.89 EUR |
| 7+ | 36.59 EUR |
| 10+ | 31.64 EUR |
| 50+ | 29.11 EUR |
| 100+ | 23.29 EUR |
| 250+ | 22.81 EUR |