SCT4036KRHRC15 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: 1200V, 43A, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 689 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 33.63 EUR |
| 30+ | 25.14 EUR |
| 120+ | 23.03 EUR |
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Technische Details SCT4036KRHRC15 Rohm Semiconductor
Description: 1200V, 43A, 4-PIN THD, TRENCH-ST, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V, Power Dissipation (Max): 176W, Vgs(th) (Max) @ Id: 4.8V @ 11.1mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT4036KRHRC15 nach Preis ab 24.27 EUR bis 36.40 EUR
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SCT4036KRHRC15 | Hersteller : ROHM Semiconductor |
MOSFET 1200V, 43A MOSFET |
auf Bestellung 669 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4036KRHRC15 | Hersteller : ROHM |
Description: ROHM - SCT4036KRHRC15 - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 43 A, 1.2 kV, 0.036 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 43A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 176W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.036ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 415 Stücke: Lieferzeit 14-21 Tag (e) |