SCT4045DEHRC11 ROHM
Hersteller: ROHM
Description: ROHM - SCT4045DEHRC11 - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 34 A, 750 V, 0.045 ohm, TO-247N
tariffCode: 85412900
Drain-Source-Spannung Vds: 750V
rohsCompliant: YES
Dauer-Drainstrom Id: 34A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 115W
Bauform - Transistor: TO-247N
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.045ohm
SVHC: Lead (23-Jan-2024)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 18.09 EUR |
| 15+ | 15.85 EUR |
| 16+ | 13.76 EUR |
| 50+ | 11.72 EUR |
| 100+ | 11.7 EUR |
| 250+ | 11.67 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT4045DEHRC11 ROHM
Description: 750V, 34A, 3-PIN THD, TRENCH-STR, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V, Power Dissipation (Max): 115W, Vgs(th) (Max) @ Id: 4.8V @ 8.89mA, Supplier Device Package: TO-247N, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT4045DEHRC11 nach Preis ab 12.88 EUR bis 26.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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SCT4045DEHRC11 | ROHM Semiconductor |
SiC MOSFETs TO247 750V 34A N-CH SIC |
auf Bestellung 810 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4045DEHRC11 | Rohm Semiconductor |
Description: 750V, 34A, 3-PIN THD, TRENCH-STR Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V Power Dissipation (Max): 115W Vgs(th) (Max) @ Id: 4.8V @ 8.89mA Supplier Device Package: TO-247N Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 264 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SCT4045DEHRC11 |
|
Hersteller: ROHM Semiconductor
SiC MOSFETs TO247 750V 34A N-CH SIC
SiC MOSFETs TO247 750V 34A N-CH SIC
auf Bestellung 810 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.93 EUR |
| 10+ | 15.57 EUR |
| 100+ | 14.47 EUR |
| 450+ | 12.88 EUR |
| SCT4045DEHRC11 |
|
Hersteller: Rohm Semiconductor
Description: 750V, 34A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
Qualification: AEC-Q101
Description: 750V, 34A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 264 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.68 EUR |
| 10+ | 18.69 EUR |