SCT4050KEHRC11 ROHM Semiconductor
Hersteller: ROHM Semiconductor
SiC MOSFETs 1200V, 32A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
| Anzahl | Preis |
|---|---|
| 1+ | 22.04 EUR |
| 10+ | 16.46 EUR |
| 100+ | 14.22 EUR |
| 450+ | 13.46 EUR |
| 900+ | 11.44 EUR |
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Technische Details SCT4050KEHRC11 ROHM Semiconductor
Description: 1200V, 32A, 3-PIN THD, TRENCH-ST, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tj), Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 18V, Power Dissipation (Max): 136W, Vgs(th) (Max) @ Id: 4.8V @ 8mA, Supplier Device Package: TO-247N, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1703 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT4050KEHRC11 nach Preis ab 11.91 EUR bis 22.72 EUR
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SCT4050KEHRC11 | Rohm Semiconductor |
Description: 1200V, 32A, 3-PIN THD, TRENCH-ST Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tj) Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 18V Power Dissipation (Max): 136W Vgs(th) (Max) @ Id: 4.8V @ 8mA Supplier Device Package: TO-247N Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1703 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 410 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT4050KEHRC11 |
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Hersteller: Rohm Semiconductor
Description: 1200V, 32A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tj)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 18V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 4.8V @ 8mA
Supplier Device Package: TO-247N
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1703 pF @ 800 V
Qualification: AEC-Q101
Description: 1200V, 32A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tj)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 18V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 4.8V @ 8mA
Supplier Device Package: TO-247N
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1703 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 22.72 EUR |
| 30+ | 13.86 EUR |
| 120+ | 11.91 EUR |