SCT4062KRHRC15 ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 17.49 EUR |
| 10+ | 12.71 EUR |
| 100+ | 12.21 EUR |
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Technische Details SCT4062KRHRC15 ROHM Semiconductor
Description: 1200V, 26A, 4-PIN THD, TRENCH-ST, Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +21V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Part Status: Active, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 4.8V @ 6.45mA, Power Dissipation (Max): 115W, Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote SCT4062KRHRC15 nach Preis ab 14.59 EUR bis 26.86 EUR
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SCT4062KRHRC15 | Hersteller : Rohm Semiconductor |
 Description: 1200V, 26A, 4-PIN THD, TRENCH-STInput Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +21V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 4.8V @ 6.45mA Power Dissipation (Max): 115W Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 401 Stücke: Lieferzeit 10-14 Tag (e) |
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