auf Bestellung 679 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 24.48 EUR |
| 10+ | 21.6 EUR |
| 25+ | 21 EUR |
| 50+ | 19.82 EUR |
| 100+ | 18.66 EUR |
| 250+ | 18.09 EUR |
| 450+ | 15.66 EUR |
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Technische Details SCT4062KRHRC15 ROHM Semiconductor
Description: 1200V, 26A, 4-PIN THD, TRENCH-ST, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V, Power Dissipation (Max): 115W, Vgs(th) (Max) @ Id: 4.8V @ 6.45mA, Supplier Device Package: TO-247-4L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SCT4062KRHRC15 nach Preis ab 14.59 EUR bis 26.86 EUR
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SCT4062KRHRC15 | Hersteller : Rohm Semiconductor |
 Description: 1200V, 26A, 4-PIN THD, TRENCH-STPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V Power Dissipation (Max): 115W Vgs(th) (Max) @ Id: 4.8V @ 6.45mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 401 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4062KRHRC15 | Hersteller : ROHM |
Description: ROHM - SCT4062KRHRC15 - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 26 A, 1.2 kV, 0.062 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 26A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 115W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.062ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 370 Stücke: Lieferzeit 14-21 Tag (e) |