SCT4065DWATL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: 750V, 22A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
| Anzahl | Preis |
|---|---|
| 1000+ | 5.6 EUR |
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Technische Details SCT4065DWATL Rohm Semiconductor
Description: 750V, 22A, 7-PIN SMD, TRENCH-STR, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V, Power Dissipation (Max): 71W, Vgs(th) (Max) @ Id: 4.8V @ 6.15mA, Supplier Device Package: TO-263-7LA, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V.
Weitere Produktangebote SCT4065DWATL nach Preis ab 6.85 EUR bis 13.68 EUR
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SCT4065DWATL | Hersteller : Rohm Semiconductor |
Description: 750V, 22A, 7-PIN SMD, TRENCH-STR Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V Power Dissipation (Max): 71W Vgs(th) (Max) @ Id: 4.8V @ 6.15mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V |
auf Bestellung 1100 Stücke: Lieferzeit 10-14 Tag (e) |
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