SCT4090KEHRC11 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: 1200V, 19A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 4.8V @ 4.44mA
Supplier Device Package: TO-247N
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 16.09 EUR |
| 30+ | 9.56 EUR |
| 120+ | 8.13 EUR |
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Technische Details SCT4090KEHRC11 Rohm Semiconductor
Description: 1200V, 19A, 3-PIN THD, TRENCH-ST, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V, Power Dissipation (Max): 88W, Vgs(th) (Max) @ Id: 4.8V @ 4.44mA, Supplier Device Package: TO-247N, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V, Qualification: AEC-Q101.