SCT50N120 STMicroelectronics
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 130A; 318W
On-state resistance: 70mΩ
Mounting: THT
Pulsed drain current: 130A
Power dissipation: 318W
Gate charge: 122nC
Polarisation: unipolar
Technology: SiC; SiCFET
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...25V
Kind of package: tube
Case: HIP247™
| Anzahl | Privatkunde |
|---|---|
| 3+ | 39.21 EUR |
| 10+ | 37.31 EUR |
| 30+ | 37.28 EUR |
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Technische Details SCT50N120 STMicroelectronics
Description: STMICROELECTRONICS - SCT50N120 - Siliziumkarbid-MOSFET, SiC, Eins, n-Kanal, 65 A, 1.2 kV, 0.069 ohm, HiP247, tariffCode: 85412900, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: YES, Dauer-Drainstrom Id: 65A, hazardous: false, rohsPhthalatesCompliant: YES, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 318W, Gate-Source-Schwellenspannung, max.: 3V, MOSFET-Modul-Konfiguration: Eins, euEccn: NLR, Verlustleistung: 318W, Bauform - Transistor: HiP247, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.052ohm, Rds(on)-Prüfspannung: 20V, Betriebstemperatur, max.: 200°C, Drain-Source-Durchgangswiderstand: 0.069ohm, SVHC: No SVHC (15-Jan-2018).
Weitere Produktangebote SCT50N120 nach Preis ab 30.81 EUR bis 52.66 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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SCT50N120 | STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube |
auf Bestellung 575 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT50N120 | STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube |
auf Bestellung 575 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT50N120 | STMicroelectronics |
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247 package |
auf Bestellung 329 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT50N120 | STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube |
auf Bestellung 642 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT50N120 | STMicroelectronics |
Description: SICFET N-CH 1200V 65A HIP247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 40A, 20V Power Dissipation (Max): 318W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: HiP247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 400 V |
auf Bestellung 108 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT50N120 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH SiC 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube
Trans MOSFET N-CH SiC 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube
auf Bestellung 575 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 41.67 EUR |
| 10+ | 30.81 EUR |
| SCT50N120 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH SiC 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube
Trans MOSFET N-CH SiC 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube
auf Bestellung 575 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 41.67 EUR |
| 10+ | 31.49 EUR |
| SCT50N120 |
|
Hersteller: STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247 package
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247 package
auf Bestellung 329 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 47.15 EUR |
| 10+ | 35.22 EUR |
| SCT50N120 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH SiC 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube
Trans MOSFET N-CH SiC 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube
auf Bestellung 642 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 47.8 EUR |
| SCT50N120 |
|
Hersteller: STMicroelectronics
Description: SICFET N-CH 1200V 65A HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 40A, 20V
Power Dissipation (Max): 318W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: HiP247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 400 V
Description: SICFET N-CH 1200V 65A HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 40A, 20V
Power Dissipation (Max): 318W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: HiP247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 400 V
auf Bestellung 108 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 52.66 EUR |
| 30+ | 34.02 EUR |