SCTH100N65G2-7AG STMicroelectronics
Hersteller: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 95 A in an H2
| Anzahl | Preis |
|---|---|
| 1+ | 43.82 EUR |
| 10+ | 32.07 EUR |
| 100+ | 31.84 EUR |
| 500+ | 31.8 EUR |
| 1000+ | 28.44 EUR |
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Technische Details SCTH100N65G2-7AG STMicroelectronics
Description: SICFET N-CH 650V 95A H2PAK-7, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V, Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: H2PAK-7, Vgs(th) (Max) @ Id: 5V @ 5mA, Power Dissipation (Max): 360W (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V, Current - Continuous Drain (Id) @ 25°C: 95A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Weitere Produktangebote SCTH100N65G2-7AG nach Preis ab 30.71 EUR bis 44 EUR
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SCTH100N65G2-7AG | Hersteller : STMicroelectronics |
Description: SICFET N-CH 650V 95A H2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: H2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V Qualification: AEC-Q101 |
auf Bestellung 510 Stücke: Lieferzeit 10-14 Tag (e) |
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SCTH100N65G2-7AG | Hersteller : STMicroelectronics |
Description: SICFET N-CH 650V 95A H2PAK-7 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: H2PAK-7 Vgs(th) (Max) @ Id: 5V @ 5mA Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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| SCTH100N65G2-7AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 95A; Idm: 260A; 360W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 95A Pulsed drain current: 260A Power dissipation: 360W Case: H2PAK7 Gate-source voltage: -10...22V On-state resistance: 26mΩ Mounting: SMD Gate charge: 162nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |