SCTH100N65G2-7AG STMicroelectronics
Hersteller: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 95 A in an H2
| Anzahl | Privatkunde |
|---|---|
| 1+ | 52.15 EUR |
| 10+ | 38.16 EUR |
| 100+ | 37.89 EUR |
| 500+ | 37.84 EUR |
| 1000+ | 33.84 EUR |
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Technische Details SCTH100N65G2-7AG STMicroelectronics
Description: SICFET N-CH 650V 95A H2PAK-7, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V, Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: H2PAK-7, Vgs(th) (Max) @ Id: 5V @ 5mA, Power Dissipation (Max): 360W (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V, Current - Continuous Drain (Id) @ 25°C: 95A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Weitere Produktangebote SCTH100N65G2-7AG nach Preis ab 36.54 EUR bis 52.36 EUR
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SCTH100N65G2-7AG | STMicroelectronics |
Description: SICFET N-CH 650V 95A H2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: H2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V Qualification: AEC-Q101 |
auf Bestellung 510 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCTH100N65G2-7AG |
|
Hersteller: STMicroelectronics
Description: SICFET N-CH 650V 95A H2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: H2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V
Qualification: AEC-Q101
Description: SICFET N-CH 650V 95A H2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: H2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V
Qualification: AEC-Q101
auf Bestellung 510 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 52.36 EUR |
| 10+ | 38.33 EUR |
| 100+ | 36.54 EUR |