SCTH35N65G2V-7 STMicroelectronics
Hersteller: STMicroelectronicsDescription: SICFET N-CH 650V 45A H2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: H2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 23.41 EUR |
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Technische Details SCTH35N65G2V-7 STMicroelectronics
Description: SICFET N-CH 650V 45A H2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: H2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V.
Weitere Produktangebote SCTH35N65G2V-7 nach Preis ab 25.53 EUR bis 36.97 EUR
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SCTH35N65G2V-7 | Hersteller : STMicroelectronics |
Description: SICFET N-CH 650V 45A H2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: H2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V |
auf Bestellung 1704 Stücke: Lieferzeit 21-28 Tag (e) |
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SCTH35N65G2V-7 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCTH35N65G2V-7 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 45 A, 650 V, 0.045 ohm, H2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 45A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.2V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 208W Bauform - Transistor: H2PAK Anzahl der Pins: 7Pin(s) productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.045ohm |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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SCTH35N65G2V-7 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCTH35N65G2V-7 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 45 A, 650 V, 0.045 ohm, H2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 45A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.2V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 208W Bauform - Transistor: H2PAK Anzahl der Pins: 7Pin(s) productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.045ohm |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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SCTH35N65G2V-7 | Hersteller : STMicroelectronics |
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| SCTH35N65G2V-7 | Hersteller : STMicroelectronics |
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| SCTH35N65G2V-7 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Polarisation: unipolar Kind of package: tape Kind of channel: enhanced Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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SCTH35N65G2V-7 | Hersteller : STMicroelectronics |
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| SCTH35N65G2V-7 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Polarisation: unipolar Kind of package: tape Kind of channel: enhanced Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |