SCTH35N65G2V-7 STMicroelectronics
Hersteller: STMicroelectronics
Description: SICFET N-CH 650V 45A H2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: H2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
| Anzahl | Preis |
|---|---|
| 1000+ | 9.76 EUR |
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Technische Details SCTH35N65G2V-7 STMicroelectronics
Description: SICFET N-CH 650V 45A H2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: H2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V.
Weitere Produktangebote SCTH35N65G2V-7 nach Preis ab 11.95 EUR bis 20.91 EUR
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SCTH35N65G2V-7 | Hersteller : STMicroelectronics |
Description: SICFET N-CH 650V 45A H2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: H2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V |
auf Bestellung 1254 Stücke: Lieferzeit 10-14 Tag (e) |
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SCTH35N65G2V-7 | Hersteller : STMicroelectronics |
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ 45 A |
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