SCTH35N65G2V-7AG STMicroelectronics
Hersteller: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25
| Anzahl | Preis |
|---|---|
| 1+ | 19.84 EUR |
| 10+ | 13.89 EUR |
| 100+ | 12.23 EUR |
| 1000+ | 10.31 EUR |
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Technische Details SCTH35N65G2V-7AG STMicroelectronics
Description: SICFET N-CH 650V 45A H2PAK-7, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Grade: Automotive, Supplier Device Package: H2PAK-7, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 208W (Tc), Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V.
Weitere Produktangebote SCTH35N65G2V-7AG nach Preis ab 9.97 EUR bis 19.92 EUR
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SCTH35N65G2V-7AG | Hersteller : STMicroelectronics |
Description: SICFET N-CH 650V 45A H2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: H2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V Qualification: AEC-Q101 |
auf Bestellung 870 Stücke: Lieferzeit 10-14 Tag (e) |
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SCTH35N65G2V-7AG | Hersteller : STMicroelectronics |
Description: SICFET N-CH 650V 45A H2PAK-7 Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Grade: Automotive Supplier Device Package: H2PAK-7 Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V |
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