SCTH35N65G2V-7AG STMicroelectronics
Hersteller: STMicroelectronicsMOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm
auf Bestellung 997 Stücke:
Lieferzeit 708-722 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 42.15 EUR |
| 10+ | 37.75 EUR |
| 25+ | 36.79 EUR |
| 50+ | 35.44 EUR |
| 100+ | 32.6 EUR |
| 250+ | 31.69 EUR |
| 500+ | 29.51 EUR |
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Technische Details SCTH35N65G2V-7AG STMicroelectronics
Description: SICFET N-CH 650V 45A H2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: H2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V, Qualification: AEC-Q101.
Weitere Produktangebote SCTH35N65G2V-7AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SCTH35N65G2V-7AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCTH35N65G2V-7AG - Siliziumkarbid-MOSFET, Eins, n-Kanal, 45 A, 650 V, 0.045 ohm, H2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 45A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.2V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 208W Bauform - Transistor: H2PAK Anzahl der Pins: 7Pins productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.045ohm |
auf Bestellung 965 Stücke: Lieferzeit 14-21 Tag (e) |
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SCTH35N65G2V-7AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCTH35N65G2V-7AG - Siliziumkarbid-MOSFET, Eins, n-Kanal, 45 A, 650 V, 0.045 ohm, H2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 45A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Verlustleistung Pd: 208W Gate-Source-Schwellenspannung, max.: 3.2V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 208W Bauform - Transistor: H2PAK Anzahl der Pins: 7Pins productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.045ohm Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.045ohm |
auf Bestellung 965 Stücke: Lieferzeit 14-21 Tag (e) |
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SCTH35N65G2V-7AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 45A Automotive 8-Pin(7+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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| SCTH35N65G2V-7AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 45A Automotive AEC-Q101 8-Pin(7+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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SCTH35N65G2V-7AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 45A Automotive AEC-Q101 8-Pin(7+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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| SCTH35N65G2V-7AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Polarisation: unipolar Kind of package: tape Kind of channel: enhanced Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SCTH35N65G2V-7AG | Hersteller : STMicroelectronics |
Description: SICFET N-CH 650V 45A H2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: H2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SCTH35N65G2V-7AG | Hersteller : STMicroelectronics |
Description: SICFET N-CH 650V 45A H2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: H2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| SCTH35N65G2V-7AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Polarisation: unipolar Kind of package: tape Kind of channel: enhanced Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |