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SCTH40N120G2V7AG

SCTH40N120G2V7AG STMicroelectronics

scth40n120g2v7ag.pdf Hersteller: STMicroelectronics
Trans MOSFET N-CH SiC 1.2KV 33A Automotive AEC-Q101 8-Pin(7+Tab) H2PAK T/R
auf Bestellung 201000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+23.85 EUR
2000+22.77 EUR
3000+21.71 EUR
5000+20.67 EUR
10000+19.64 EUR
20000+18.63 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SCTH40N120G2V7AG STMicroelectronics

Description: SICFET N-CH 650V 33A H2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 18V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: H2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SCTH40N120G2V7AG nach Preis ab 18.63 EUR bis 23.85 EUR

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SCTH40N120G2V7AG SCTH40N120G2V7AG Hersteller : STMicroelectronics scth40n120g2v7ag.pdf Trans MOSFET N-CH SiC 1.2KV 33A Automotive AEC-Q101 8-Pin(7+Tab) H2PAK T/R
auf Bestellung 201000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+23.85 EUR
2000+22.77 EUR
3000+21.71 EUR
5000+20.67 EUR
10000+19.64 EUR
20000+18.63 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
SCTH40N120G2V7AG Hersteller : STMicroelectronics scth40n120g2v7ag.pdf Trans MOSFET N-CH SiC 1.2KV 33A Automotive 8-Pin(7+Tab) H2PAK T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SCTH40N120G2V7AG SCTH40N120G2V7AG Hersteller : STMicroelectronics scth40n120g2v7ag.pdf Trans MOSFET N-CH SiC 1.2KV 33A Automotive 8-Pin(7+Tab) H2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SCTH40N120G2V7AG SCTH40N120G2V7AG Hersteller : STMicroelectronics scth40n120g2v7ag.pdf Trans MOSFET N-CH SiC 1.2KV 33A Automotive AEC-Q101 8-Pin(7+Tab) H2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SCTH40N120G2V7AG SCTH40N120G2V7AG Hersteller : STMicroelectronics scth40n120g2v7ag.pdf Trans MOSFET N-CH SiC 1.2KV 33A Automotive AEC-Q101 8-Pin(7+Tab) H2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SCTH40N120G2V7AG Hersteller : STMicroelectronics scth40n120g2v7ag.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 33A; Idm: 92A; 250W; H2PAK7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 92A
Power dissipation: 250W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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SCTH40N120G2V7AG SCTH40N120G2V7AG Hersteller : STMicroelectronics scth40n120g2v7ag.pdf Description: SICFET N-CH 650V 33A H2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: H2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SCTH40N120G2V7AG SCTH40N120G2V7AG Hersteller : STMicroelectronics scth40n120g2v7ag.pdf Description: SICFET N-CH 650V 33A H2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: H2PAK-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SCTH40N120G2V7AG SCTH40N120G2V7AG Hersteller : STMicroelectronics scth40n120g2v7ag-1761500.pdf MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm
Produkt ist nicht verfügbar
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SCTH40N120G2V7AG Hersteller : STMicroelectronics scth40n120g2v7ag.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 33A; Idm: 92A; 250W; H2PAK7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 92A
Power dissipation: 250W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH