SCTH40N120G2V7AG STMicroelectronics
Hersteller: STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 33A Automotive AEC-Q101 8-Pin(7+Tab) H2PAK T/R
auf Bestellung 201000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 22.51 EUR |
| 2000+ | 21.49 EUR |
| 3000+ | 20.49 EUR |
| 5000+ | 19.51 EUR |
| 10000+ | 18.54 EUR |
| 20000+ | 17.58 EUR |
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Technische Details SCTH40N120G2V7AG STMicroelectronics
Description: SICFET N-CH 1200V 33A H2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 18V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: H2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SCTH40N120G2V7AG nach Preis ab 17.58 EUR bis 22.51 EUR
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SCTH40N120G2V7AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 33A Automotive AEC-Q101 8-Pin(7+Tab) H2PAK T/R |
auf Bestellung 201000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCTH40N120G2V7AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 33A Automotive 8-Pin(7+Tab) H2PAK T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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SCTH40N120G2V7AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 33A Automotive 8-Pin(7+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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SCTH40N120G2V7AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 33A Automotive AEC-Q101 8-Pin(7+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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SCTH40N120G2V7AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 33A Automotive AEC-Q101 8-Pin(7+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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SCTH40N120G2V7AG | Hersteller : STMicroelectronics |
Description: SICFET N-CH 1200V 33A H2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 18V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: H2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SCTH40N120G2V7AG | Hersteller : STMicroelectronics |
Description: SICFET N-CH 1200V 33A H2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 18V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: H2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SCTH40N120G2V7AG | Hersteller : STMicroelectronics |
MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm |
Produkt ist nicht verfügbar |