SCTH40N120G2V7AG STMicroelectronics
Hersteller: STMicroelectronics
Description: SICFET N-CH 1200V 33A H2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: H2PAK-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
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Technische Details SCTH40N120G2V7AG STMicroelectronics
Description: SICFET N-CH 1200V 33A H2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 18V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: H2PAK-7, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote SCTH40N120G2V7AG
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SCTH40N120G2V7AG | Hersteller : STMicroelectronics |
Description: SICFET N-CH 1200V 33A H2PAK-7 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: H2PAK-7 Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 18V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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SCTH40N120G2V7AG | Hersteller : STMicroelectronics |
MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm |
Produkt ist nicht verfügbar |
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| SCTH40N120G2V7AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 92A; 250W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 33A Pulsed drain current: 92A Power dissipation: 250W Case: H2PAK7 Gate-source voltage: -10...22V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |