SCTH50N120-7 STMicroelectronics
Hersteller: STMicroelectronics
MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ TJ = 150 C)
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Technische Details SCTH50N120-7 STMicroelectronics
Description: SICFET N-CH 1200V 65A H2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: H2PAK-7, Vgs(th) (Max) @ Id: 5.1V @ 1mA, Power Dissipation (Max): 270W (Tc), Rds On (Max) @ Id, Vgs: 69mOhm @ 40A, 20V, Current - Continuous Drain (Id) @ 25°C: 65A, FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -10V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SCTH50N120-7 | Hersteller : STMicroelectronics |
Description: SICFET N-CH 1200V 65A H2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Supplier Device Package: H2PAK-7 Vgs(th) (Max) @ Id: 5.1V @ 1mA Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 40A, 20V Current - Continuous Drain (Id) @ 25°C: 65A FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -10V |
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