SCTH50N120-7 STMicroelectronics
Hersteller: STMicroelectronicsMOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ TJ = 150 C)
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Technische Details SCTH50N120-7 STMicroelectronics
Description: SICFET N-CH 1200V 65A H2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A, Rds On (Max) @ Id, Vgs: 69mOhm @ 40A, 20V, Power Dissipation (Max): 270W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 1mA, Supplier Device Package: H2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 400 V.
Weitere Produktangebote SCTH50N120-7
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| SCTH50N120-7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 65A 8-Pin(7+Tab) H2PAK T/R |
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SCTH50N120-7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 65A 8-Pin(7+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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| SCTH50N120-7 | Hersteller : STMicroelectronics |
Description: SICFET N-CH 1200V 65A H2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A Rds On (Max) @ Id, Vgs: 69mOhm @ 40A, 20V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 1mA Supplier Device Package: H2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 400 V |
Produkt ist nicht verfügbar |