SCTH60N120G2-7 STMicroelectronics
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details SCTH60N120G2-7 STMicroelectronics
Description: SICFET N-CH 1200V 60A H2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: H2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V.
Weitere Produktangebote SCTH60N120G2-7
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
SCTH60N120G2-7 | Hersteller : STMicroelectronics | Trans MOSFET N-CH SiC 1.2KV 60A 8-Pin(7+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
||
SCTH60N120G2-7 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
SCTH60N120G2-7 | Hersteller : STMicroelectronics |
Description: SICFET N-CH 1200V 60A H2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: H2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V |
Produkt ist nicht verfügbar |
||
SCTH60N120G2-7 | Hersteller : STMicroelectronics | MOSFET Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package |
Produkt ist nicht verfügbar |
||
SCTH60N120G2-7 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced |
Produkt ist nicht verfügbar |