SCTH70N120G2V-7 STMicroelectronics
Hersteller: STMicroelectronics
Description: SILICON CARBIDE POWER MOSFET 120
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: H2PAK-7
Vgs(th) (Max) @ Id: 4.9V @ 1mA
Power Dissipation (Max): 469W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
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Technische Details SCTH70N120G2V-7 STMicroelectronics
Description: SILICON CARBIDE POWER MOSFET 120, Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: H2PAK-7, Vgs(th) (Max) @ Id: 4.9V @ 1mA, Power Dissipation (Max): 469W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Weitere Produktangebote SCTH70N120G2V-7
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SCTH70N120G2V-7 | Hersteller : STMicroelectronics |
Description: SILICON CARBIDE POWER MOSFET 120 Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: H2PAK-7 Vgs(th) (Max) @ Id: 4.9V @ 1mA Power Dissipation (Max): 469W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
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SCTH70N120G2V-7 | Hersteller : STMicroelectronics |
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 90 A, 21 mOhm (typ. TJ = 25 C) |
Produkt ist nicht verfügbar |