SCTH90N65G2V-7 STMicroelectronics
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 32.75 EUR |
Produktrezensionen
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Technische Details SCTH90N65G2V-7 STMicroelectronics
Description: SICFET N-CH 650V 90A H2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V, Power Dissipation (Max): 330W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: H2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V.
Weitere Produktangebote SCTH90N65G2V-7 nach Preis ab 28.05 EUR bis 87.13 EUR
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SCTH90N65G2V-7 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH SiC 650V 116A 8-Pin(7+Tab) H2PAK T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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SCTH90N65G2V-7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 116A 8-Pin(7+Tab) H2PAK T/R |
auf Bestellung 2420 Stücke: Lieferzeit 14-21 Tag (e) |
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SCTH90N65G2V-7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 116A 8-Pin(7+Tab) H2PAK T/R |
auf Bestellung 2420 Stücke: Lieferzeit 14-21 Tag (e) |
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SCTH90N65G2V-7 | Hersteller : STMicroelectronics |
MOSFET Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ TJ = 25C) |
auf Bestellung 17929 Stücke: Lieferzeit 14-28 Tag (e) |
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SCTH90N65G2V-7 | Hersteller : STMicroelectronics |
Description: SICFET N-CH 650V 90A H2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: H2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V |
auf Bestellung 127 Stücke: Lieferzeit 21-28 Tag (e) |
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SCTH90N65G2V-7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 116A 8-Pin(7+Tab) H2PAK T/R |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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SCTH90N65G2V-7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 116A 8-Pin(7+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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| SCTH90N65G2V-7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 116A 8-Pin(7+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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SCTH90N65G2V-7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 116A 8-Pin(7+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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SCTH90N65G2V-7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 116A 8-Pin(7+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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SCTH90N65G2V-7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 116A 8-Pin(7+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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| SCTH90N65G2V-7 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 116A; Idm: 220A; 484W; H2PAK7 Mounting: SMD Polarisation: unipolar Gate charge: 157nC Kind of channel: enhanced Gate-source voltage: ±3.2V Pulsed drain current: 220A Case: H2PAK7 Drain-source voltage: 650V Drain current: 116A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 484W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SCTH90N65G2V-7 | Hersteller : STMicroelectronics |
Description: SICFET N-CH 650V 90A H2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: H2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V |
Produkt ist nicht verfügbar |
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| SCTH90N65G2V-7 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 116A; Idm: 220A; 484W; H2PAK7 Mounting: SMD Polarisation: unipolar Gate charge: 157nC Kind of channel: enhanced Gate-source voltage: ±3.2V Pulsed drain current: 220A Case: H2PAK7 Drain-source voltage: 650V Drain current: 116A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 484W |
Produkt ist nicht verfügbar |