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SCTL35N65G2V

SCTL35N65G2V STMicroelectronics

sctl35n65g2v.pdf Hersteller: STMicroelectronics
Description: TRANS SJT N-CH 650V PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+25.56 EUR
Mindestbestellmenge: 3000
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Technische Details SCTL35N65G2V STMicroelectronics

Description: TRANS SJT N-CH 650V PWRFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: PowerFlat™ (8x8) HV, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V.

Weitere Produktangebote SCTL35N65G2V nach Preis ab 29.77 EUR bis 43.37 EUR

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SCTL35N65G2V SCTL35N65G2V Hersteller : STMicroelectronics sctl35n65g2v-1948633.pdf MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ 40 A
auf Bestellung 2881 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
2+43.08 EUR
10+ 38.04 EUR
25+ 37.99 EUR
50+ 37.93 EUR
100+ 32.84 EUR
250+ 32.81 EUR
500+ 29.77 EUR
Mindestbestellmenge: 2
SCTL35N65G2V SCTL35N65G2V Hersteller : STMicroelectronics sctl35n65g2v.pdf Description: TRANS SJT N-CH 650V PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
auf Bestellung 5948 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+43.37 EUR
10+ 38.21 EUR
100+ 33.05 EUR
500+ 29.95 EUR
SCTL35N65G2V Hersteller : STMicroelectronics sctl35n65g2v.pdf Trans MOSFET N-CH SiC 650V 40A 5-Pin Power Flat EP T/R
Produkt ist nicht verfügbar
SCTL35N65G2V Hersteller : STMicroelectronics sctl35n65g2v.pdf Trans MOSFET N-CH SiC 650V 40A 5-Pin Power Flat EP T/R
Produkt ist nicht verfügbar
SCTL35N65G2V Hersteller : STMicroelectronics sctl35n65g2v.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SCTL35N65G2V Hersteller : STMicroelectronics sctl35n65g2v.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar