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SCTL35N65G2V

SCTL35N65G2V STMicroelectronics


sctl35n65g2v.pdf
Hersteller: STMicroelectronics
Description: TRANS SJT N-CH 650V PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+12.71 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SCTL35N65G2V STMicroelectronics

Description: TRANS SJT N-CH 650V PWRFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 4-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: PowerFlat™ (8x8) HV, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V.

Weitere Produktangebote SCTL35N65G2V nach Preis ab 14.71 EUR bis 25.96 EUR

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SCTL35N65G2V SCTL35N65G2V Hersteller : STMicroelectronics sctl35n65g2v.pdf Description: TRANS SJT N-CH 650V PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
auf Bestellung 5655 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.66 EUR
10+18.13 EUR
100+15.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SCTL35N65G2V SCTL35N65G2V Hersteller : STMicroelectronics sctl35n65g2v.pdf SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
auf Bestellung 2311 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.96 EUR
10+18.34 EUR
100+15.73 EUR
1000+14.71 EUR
Im Einkaufswagen  Stück im Wert von  UAH